Texas Instruments has developed a complete power stage comprising a driver and two GaN FETs into a half-bridge configuration. The power stage is housed in a QFN package and is optimized for ...
SemiQ has announced a family of co-packaged 1200 V SOT-227 MOSFET modules based on its third-generation SiC technology. 1200 V Gen3 SiC MOSFET modules Credit: SemiQ In addition to smaller die sizes, ...
Promising higher efficiencies, the QJD1210006 and QJD1210007 silicon carbide (SiC) MOSFET modules can operate at temperatures well beyond those possible with silicon IGBT-based modules with 38% lower ...
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