Abstract: Multiple parallel insulated-gate bipolar transistor (IGBT) modules can enhance the current-carrying capacity of a power converter. However, due to parameter inconsistency of IGBT modules and ...
Mechanism by which hydrogen generates free electrons via an interaction with the defect in silicon Associate Professor ...
Key opportunities include the rise of EV production, growth in AI-driven semiconductor control, high-voltage modules for ...
CISSOID has expanded its standard product offerings with the release of the CMT-PLA1BL12300MA. This new 1200V/300A ...
Explore the new IGBT module that features advanced Trench Gate Field Stop technology for efficient power management.
Researchers announced that they have achieved the world's first elucidation of how hydrogen produces free electrons through ...
Associate Professor Yuichiro Matsushita of Materials and Structures Laboratory, Institute of Science Tokyo, Mitsubishi Electric Corporation, Associate ...
Associate Professor Yuichiro Matsushita of Materials and Structures Laboratory, Institute of Science Tokyo, Mitsubishi ...
CISSOID has expanded its standard power semiconductor portfolio with the launch of a new 1200V/300A half‑bridge ...
“It’s lightweight, easy to handle, and perfect for home repairs or quick projects.” ...
The new system, named POWER-750H and developed by the China Institute of Atomic Energy under the China National Nuclear Corp, ...
Magnachip Semiconductor Corporation today announced the launch of its new series of Insulated Gate Bipolar Transistors (IGBTs) designed for solar inverters and industrial Energy Storage Systems (ESS), ...
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